p-type doping of II–VI heterostructures from surface states: Application to ferromagnetic Cd[sub 1-x]Mn[sub x]Te quantum wells

Maslana, W.; Kossacki, P.; Bertolini, M.; Boukari, H.; Ferrand, D.; Tatarenko, S.; Cibert, J.; Gaj, J. A.
March 2003
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1875
Academic Journal
We present a study of p-type doping of CdTe and Cd[sub 1-x]Mn[sub x]Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding 2 × 10[sup 11] cm[sup -2]. Surface doping was applied to obtain samples with Cd[sub 1-x]Mn[sub x]Te quantum well with up to x=9.3% containing hole gas. We could also increase the growth temperature up to 280 °C, which results in sharper photoluminescence lines, when compared to the similar nitrogen doped samples. Carrier-induced ferromagnetism was observed in surface doped samples.


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