Origin of metal–insulator transition temperature enhancement in underdoped lanthanum manganite films

Murugavel, P.; Lee, J. H.; Yoon, Jong-Gul; Noh, T. W.; Chung, J.-S.; Heu, M.; Yoon, S.
March 2003
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1908
Academic Journal
The possibility of controlling transport properties of colossal magnetoresistance manganite films using substrate-induced strain has attracted great interest. We have investigated transport properties of La[sub 0.9]Ca[sub 0.1]MnO[sub 3], La[sub 0.92]Ba[sub 0.08]MnO[sub 3], La[sub 0.8]Ba[sub 0.2]MnO[sub 3], and LaMnO[sub 3] films. When the films were post-annealed at proper conditions, all of them showed metal-insulator transitions. Their transition temperatures T[sub MI] were much higher than the corresponding bulk values, irrespective of the type of substrate-induced biaxial strain. This surprising fact demonstrated that strain could not be the main origin of the T[sub MI] enhancement observed in the underdoped (dopant concentration x < 0.3) manganite films. We suggested that T[sub MI] enhancements should be attributed mostly to the cationic vacancies in the post-annealed films.


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