Ultralow copper drift in inductively coupled plasma silicon carbide dielectrics

Shieh, Jia-Min; Tsai, Kou-Chiang; Dai, Bau-Tong
March 2003
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1914
Academic Journal
This study investigates how copper penetration into inductively coupled plasma (ICP) trimethylsilane-based hydrogenated amorphous silicon carbide (a-SiC[sub x]:H) dielectric barriers depends on the films' hydrogen concentrations. Depositing ICP a-SiC[sub x]:H films with low hydrogen concentrations (or few defect sites), copper drift rate in such films stressed at around 200 °C, 1 MV/cm, is as low as 10[sup 5] ions/cm² s, two to five times lower than those in plasma-enhanced chemical-vapor-deposited (PECVD) a-SiC[sub x]:H and nitride barriers. Accordingly, the time-to-breakdown of ICP a-SiC[sub x]:H subjected to bias-temperature stress at above 200 °C, 2.0-2.75 MV/cm, is almost one order of magnitude longer than that of PECVD a-SiC[sub x]:H.


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