Radiation hardness of InGaAs/GaAs quantum dots

Guffarth, F.; Heitz, R.; Geller, M.; Kapteyn, C.; Born, H.; Sellin, R.; Hoffmann, A.; Bimberg, D.; Sobolev, N. A.; Carmo, M. C.
March 2003
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1941
Academic Journal
The interaction between point defects in the matrix and excitons localized in self-organized InGaAs/ GaAs quantum dots is investigated for structures irradiated by protons. The exciton ground state is demonstrated to be unaffected by radiation doses up to 10[sup 14] p/cm². The close proximity of radiation-induced defects leads to a strong nonmonotonous temperature dependence of the luminescence yield: Carriers are lost via tunneling from excited quantum dot states to irradiation-induced defects below ∼100 K, whereas at higher temperatures, carriers escape to the barrier and are captured by defects.


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