Photovoltaic efficiency enhancement through thermal up-conversion

Ekins-Daukes, N. J.; Ballard, I.; Calder, C. D. J.; Barnham, K. W. J.; Hill, G.; Roberts, J. S.
March 2003
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1974
Academic Journal
Anti-Stokes emission is observed experimentally from a series of quantum well p-i-n structures and is attributed to a quasithermal equilibrium being established between the quantum well and barrier material. A device is described whereby the anti-Stokes emission from a quantum well p-i-n structure can be used to increase the short-circuit current of a second conventional solar cell, essentially coupling sub-band-gap sunlight to the ambient thermal reservoir. For a GaAs p/n cell at 300 K, this effect is calculated to raise the one-sun power conversion efficiency from 30.0% to 31.3%. Greater efficiency increases are possible if a thermal gradient is established across the structure.


Related Articles

  • Resonant enhancement of the photocurrent in multiple-quantum-well photovoltaic devices. Raisky, O. Y.; Wang, W. B. // Applied Physics Letters;1/4/1999, Vol. 74 Issue 1, p129 

    Studies resonant enhancement of the photocurrent in multiple-quantum-well photovoltaic devices. Proposed sequential resonant tunneling; Multiple-quantum-well heterostructures; Reduction in photoluminescence intensity.

  • A Structural Study of InGaAs/InGaAs Strain-Balanced MQW for TPV Applications. Tundo, S.; Mazzer, M.; Nasi, L.; Lazzarini, L.; Ferrari, C.; Salviati, G.; Passaseo, A.; Torsello, G.; Diso, D.; Licciulli, A.; Barnham, K.; Daukes, N. Ekins; Rohr, C.; Abbott, P.; Clarke, G. // AIP Conference Proceedings;2003, Vol. 653 Issue 1, p201 

    Multi-quantum well photovoltaic cells offer a number of advantages over conventional "singlegap" cells for thermophotovoltaic applications, first of all because they can reach a higher open circuit voltage under the same radiation source and with the same absorption edge. Material quality issues...

  • Photovoltaic quantum well infrared detector. Goossen, K. W.; Lyon, S. A.; Alavi, K. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1701 

    A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light,...

  • Characterisation Of Strain-Compensated InGaAs/InGaAs Quantum Well Cells For TPV Applications. Abbott, Paul; Rohr, Carsten; Connolly, James P.; Ballard, Ian; Barnham, Keith W. J.; Ginige, Ravin; Clarke, Graham; Nasi, Lucia; Mazzer, Massimo // AIP Conference Proceedings;2003, Vol. 653 Issue 1, p213 

    Thermophotovoltaic (TPV) generators can reduce pollution by lowering their operating temperature, but the choice of semiconductor materials for this purpose is limited. We present results on an InGaAs p-n ceil lattice-matched to InP which is optimised for the Erbia emission spectrum peak at a...

  • Open-circuit voltage characteristics of InP-based quantum well solar cells. Anderson, Neal G.; Wojtczuk, Steven J. // Journal of Applied Physics;2/15/1996, Vol. 79 Issue 4, p1973 

    Presents an experimental and theoretical study of open-circuit voltage characteristics of InP-based multiple-quantum-well solar cells. Methodology; Results of the study; Conclusions.

  • Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base. Sachenko, A. V.; Sokolovskyi, I. O. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2008, Vol. 11 Issue 1, p1 

    Analytical expressions for the maximum obtainable photoconversion efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using the SimWindows program is fulfilled. It is shown that the...

  • InGaN/GaN multiple quantum well solar cells with long operating wavelengths. Dahal, R.; Pantha, B.; Li, J.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG 

    We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells (MQWs) with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths...

  • Improvement in the conversion efficiency of single-junction SiGe solar cells by intentional introduction of the compositional distribution. Tayanagi, Misumi; Usami, Noritaka; Pan, Wugen; Ohdaira, Keisuke; Fujiwara, Kozo; Nose, Yoshitaro; Nakajima, Kazuo // Journal of Applied Physics;3/1/2007, Vol. 101 Issue 5, p054504 

    We attempted to clarify the impact of the compositional distribution on recently reported improvement in the conversion efficiency of solar cells based on bulk multicrystalline SiGe. For this purpose, Si1-xGex/Si1-yGey multiple quantum well structures on heavily doped Si-on-insulator were...

  • An approach to high efficiencies using GaAs/GaInNAs multiple quantum well and superlattice solar cell. Courel, Maykel; Rimada, Julio C.; Hernández, Luis // Journal of Applied Physics;Sep2012, Vol. 112 Issue 5, p054511 

    A new type of photovoltaic device where GaAs/GaInNAs multiple quantum wells (MQW) or superlattice (SL) are inserted in the i-region of a GaAs p-i-n solar cell (SC) is presented. The results suggest the device can reach record efficiencies for single-junction solar cells. A theoretical model is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics