TITLE

In[sub 0.6]Ga[sub 0.4]As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

AUTHOR(S)
Jiang, Lin; Li, Sheng S.; Yeh, Nien-Tze; Chyi, Jen-Inn; Ross, C. E.; Jones, K. S.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1986
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A high-sensitivity In[sub 0.6]Ga[sub 0.4]As/GaAs quantum-dot infrared photodetector (QDIP) with detection wave band in 6.7-11.5 µm and operating temperature up to 260 K under normal incident illumination has been demonstrated. The peak detection wavelength shifts from 7.6 to 8.4 µm when the temperature rises from 40 to 260 K. The background limited performance (BLIP) detectivity (D[sup *, sub BLIP]) measured at V[sub b] = -2.0V, T=77K, and λ[sub p]=7.6 µm was found to be 1.1 × 10[sup 10] cm Hz[sup ½]/W, with a corresponding responsivity of 0.22 A/W. The high operating temperature is attributed to the very low dark current and long carrier lifetime in the quantum dots of this device. The results show that this QDIP can operate at high temperature without using the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current.
ACCESSION #
9319850

 

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