TITLE

Is the use of GaN-on-Si for lighting LEDs just an impossible dream?

PUB. DATE
November 2013
SOURCE
Electronics Weekly;11/13/2013, Issue 2567, p16
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article discusses technical hurdles that should be addressed before substituting silicon for sapphire in manufacturing Light Emitting Diode (LEDs). It provides detail information on structure Lighting LED devices, which are fabricated on gallium nitride (GaN) semiconductor layers. The author also tells that silicon wafers are cheaper than sapphire and lighting LEDs grown on silicon wafers will be as good as LEDs developed on sapphire.
ACCESSION #
92954144

 

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