TITLE

Photoelectric Properties of ZnO Films Doped with Cu and Ag Acceptor Impurities

AUTHOR(S)
Gruzintsev, A. N.; Volkov, V. T.; Yakimov, E. E.
PUB. DATE
March 2003
SOURCE
Semiconductors;Mar2003, Vol. 37 Issue 3, p259
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence exerted by doping with Cu and Ag acceptor impurities at a content of 1, 3, and 5 at. % on the luminescence and photoconductivity of zinc oxide films has been studied. Electron-beam evaporation in optimal modes has been used to obtain films with predominant luminescence in the UV spectral range. It has been shown that the incorporation of copper yields three types of point defects in ZnO: Cuzn (3d[sup 10]), CUZn (3d[sup 9]), and Cu[sub i]; and in silver, a single type: Ag[sub Zn] (3d[sup 10]). Precipitation of a silver oxide phase at the highest impurity concentration has been observed. Impurity incorporation leads to a pronounced increase in the resistance and photosensitivity of films.
ACCESSION #
9284093

 

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