Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

Ratnikov, V. V.; Kalmykov, A. E.; Myasoedov, A. V.; Kukushkin, S. A.; Osipov, A. V.; Sorokin, L. M.
November 2013
Technical Physics Letters;Nov2013, Vol. 39 Issue 11, p994
Academic Journal
X-ray diffraction and transmission electron microscopy techniques have been used to study the dynamics of variation of the structural characteristics and deformation state in SiC, AlN, and GaN epilayers sequentially grown on a Si(111) substrate. In this system, the SiC layer has been grown by solid-phase epitaxy, while the AlN and GaN layers have been deposited by chloride-hydride vapor-phase epitaxy (HVPE) using argon as a carrier gas.


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