Growth of room-temperature “arsenic free” infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers

Plis, E.; Rotella, P.; Raghavan, S.; Dawson, L. R.; Krishna, S.; Le, D.; Morath, C. P.
March 2003
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1658
Academic Journal
We report the growth of a high-quality graded InA1Sb digital alloy buffer layer on GaSb substrates. The metamorphic buffer layer relaxes the lattice matching constraint and allows the growth of heterostructures without the use of a second group V element. Cross-sectional transmission electronic microscopy images reveal a very low dislocation density in the buffer layer. Using such a buffer layer, a room-temperature InGaSb photovoltaic detector with λ[sub cutoff]∼3 μm has been fabricated with an external quantum efficiency > 70%.


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