TITLE

Parametric study of Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]/GaAs quantum wells for 1.3-μm laser operation

AUTHOR(S)
Chow, W. W.; Harris, J. S.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1673
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A microscopic laser theory was used to investigate gain properties in Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]/GaAs quantum wells. We considered combinations of x and y giving laser emission around 1.30 μm. Optical properties affecting laser threshold and dynamical response are described for structures with strain ranging from compressive to tensile. A parametric study of this kind should provide useful information for the optimization of GalnNAs vertical-cavity surface-emitting laser gain media for telecommunications applications.
ACCESSION #
9275610

 

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