TITLE

Strain-driven facet formation on self-assembled InAs islands on GaAs (311)A

AUTHOR(S)
Wang, Z. M.; Wen, H.; Yazdanpanah, V. R.; Shultz, J. L.; Salamo, G. J.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1688
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The shape of InAs three-dimensional islands grown on GaAs(311)A substrates by molecular-beam epitaxy was investigated by in situ scanning tunneling microscopy. The island is found to be laterally surrounded by (111)A and {110} facets together with a convex curved region close to the (100) facet. The top ridge of the islands is atomically resolved to be the most recently discovered high-index surface {11,5,2}. This observation points to the importance of the study of nanostructure growth on high-index surfaces and their characterization.
ACCESSION #
9275600

 

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