TITLE

Thermally induced oxide crystallinity and interface destruction in Ga[sub 2]O[sub 3]–GaAs structures

AUTHOR(S)
Passlack, M.; Abrokwah, J. K.; Yu, Z.; Droopad, R.; Overgaard, C.; Kawayoshi, H.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1691
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous Ga[sub 2]O[sub 3] films are deposited onto the GaAs(001) surface using effusive evaporation from a high-purity polycrystalline Ga[sub 2]O[sub 3] source. The Ga[sub 2]O[sub 3]-GaAs structure is characterized by cross-sectional transmission electron microscopy, electron diffraction, and photoluminescence intensity measurements. As-deposited Ga[sub 2]O[sub 3] films are found to be amorphous forming an atomically abrupt interface of low interface state density D[sub it] with GaAs. For oxide films with a thickness t[sub ox] ≥ 127 Å, rapid thermal annealing above a critical temperature T[sub c]=720 °C induces Ga[sub 2]O[sub 3] bulk crystallization resulting in structural deformation of the Ga[sub 2]O[sub 3]-GaAs interface and complete destruction of its low D[sub it] character. Preliminary data suggest that the critical temperature T[sub c] may increase in the limit of very thin Ga[sub 2]O[sub 3] films.
ACCESSION #
9275598

 

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