Control of spin functionality in ZnMnSe-based structures: Spin switching versus spin alignment

Buyanova, I. A.; Rudko, G. Yu.; Chen, W. M.; Toropov, A. A.; Sorokin, S. V.; Ivanov, S. V.; Kop’ev, P. S.
March 2003
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1700
Academic Journal
The ability of attaining desired spin functionality by adjusting structural design is demonstrated in diluted magnetic semiconductor (DMS) quantum structures based on II-VI semiconductors. The following spin enabling functions are achieved by tuning the ratio between the rates of exciton spin relaxation within the DMS and exciton escape from it to an adjacent nonmagnetic spin detector. Spin switching is realized when using a thin layer of Zn[sub 0.95]Mn[sub 0.05]Se as a spin manipulator and is attributed to a fast exciton escape from the DMS preceding the spin relaxation. Spin alignment is accomplished in tunneling structures where the presence of an energy barrier inserted between a spin manipulator (a DMS-based superlattice) and a spin detector ensures a slow escape rate from the DMS layer.


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