Formation of InAs self-assembled quantum rings on InP

Raz, T.; Ritter, D.; Bahir, G.
March 2003
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1706
Academic Journal
Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1-nm-thick InP layer. The anisotropic material redistribution occurs within a few minutes and leads to a change from lens-like to elongated ring-like islands. The shape transformation is not accompanied by dot material compositional change. The formation of InAs/InP quantum rings disagrees with a previous model of InAs/GaAs ring formation that assumes that the driving force for the dot to ring transformation is the difference in surface diffusion velocity of indium and gallium atoms.


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