TITLE

Current-induced structural modification of silicon-on-insulator nanocircuits

AUTHOR(S)
Clement, N.; Francinelli, A.; Tonneau, D.; Scotto, Ph.; Jandard, F.; Dallaporta, H.; Safarov, V.; Fraboulet, D.; Gautier, J.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1727
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon-on-insulator (SOI) materials are considered the next form of Si for extending the metaloxide-silicon technology. Here, we report the electrical study correlated with the topographical modification of nanostructures built on 20-nm-thick SOI. At current densities around 3 × 10[sup 6] A cm[sup -2], we noticed an irreversible modification characterized by formation of nanochannels and failures at n + n contacts. The origin of these channels can be attributed either to hydrodynamic diffusion of positive Si ions or to momentum exchange with holes created by impact ionization at high electric field (10[sup 5] V/cm). We show also that the heating of the circuit plays an important role in the process.
ACCESSION #
9275569

 

Related Articles

  • High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing. Celler, G. K.; Hemment, P. L. F.; West, K. W.; Gibson, J. M. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p532 

    Ion beam synthesis of a buried SiO2 layer is an attractive silicon-on-insulator technology for high-speed complementary metal-oxide-semiconductor circuits and radiation hardened devices. We demonstrate here a new annealing procedure at 1405 °C that produces silicon films of excellent quality,...

  • VSEA symposium provides perspective on implant roadmap. D.V. // Solid State Technology;Sep2002, Vol. 45 Issue 9, p26 

    Highlights the single-gate evolution to double-gate silicon-on-insulator (SOI) complementary metal oxide semiconductors. Preference to low temperature activation; Advantages of using SOI for radio frequency applications.

  • Kink effect on subthreshold current conduction mechanism for n-channel metal-oxide-silicon devices. Chen, S. S.; Lin, S. C.; Kuo, J. B. // Journal of Applied Physics;11/15/1996, Vol. 80 Issue 10, p5821 

    Presents a study which analyzed the subthreshold current conduction mechanism for partially-depleted silicon-on-insulator (SOI) n-channel metal-oxide-silicon (NMOS) devices. Discussion on the current conduction mechanism of partially-depleted SOI NMOS device; Impact of ionization effect on the...

  • Physical basis and limitation of universal mobility behavior in fully depleted silicon-on... Shoji, Masanari; Omura, Yasuhisa // Journal of Applied Physics;1/15/1997, Vol. 81 Issue 2, p786 

    Investigates the physical basis and the limitation for the universal mobility behavior of fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor silicon inversion layers. Analysis of potential profile, subband structure and electron density distribution; Identical mobility...

  • An investigation of anomalous current-voltage characteristics in silicon-on-insulator metal-oxide-semiconductor transistors. Liu, Patrick S.; Liu, George T. // Journal of Applied Physics;7/15/1993, Vol. 74 Issue 2, p1410 

    Investigates floating-body effects such as hysteresis,a single-transistor latch, and steep subthreshold slopes in n-channel silicon-on-insulator metal-oxide-semiconductor (SOI MOS) transistors. Model formulation; Measurement and simulation of hysteresis in drain current-drain bias...

  • Laser-induced lateral epitaxy in fully depleted silicon-on-insulator junctions. Dezfulian, Kevin K.; Krusius, J. Peter; Thompson, Michael O.; Talwar, Somit // Applied Physics Letters;9/16/2002, Vol. 81 Issue 12, p2238 

    Junction formation by laser-induced lateral epitaxy was studied on a fully depleted silicon-on-insulator substrate (25-30 nm Si on 375 nm silicon dioxide). Selective laser melting of amorphous films with a 35 ns 308 nm XeCl laser pulse was characterized in situ using transient conduction and...

  • The effect of bonded interface on electrical properties of bonded silicon-on-insulator wafers. Ling, L.; Radzimski, Z. J.; Abe, T.; Shimura, F. // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3610 

    Presents a study which investigated the effect of bonded interface location on the electrical properties of silicon-on-insulator (SOI) wafers. Characteristics of the metal-oxide-silicon (MOS) capacitors; Influence of the properties of SOI to the bonding process; Fabrication of MOS-I structures.

  • Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer. Yoshida, Haruhiko; Sasakura, Hiroshi; Yabuuchi, Tomoyuki; Takami, Toshinori; Uchihashi, Takayuki; Kishino, Seigo // Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1825 

    A scanning charge pumping method using a back channel is proposed for the characterization of interface traps in a silicon-on-insulator (SOI) wafer. In this method, a contactless gate electrode is used instead of the permanent gate electrode of normal metal–oxide–semiconductor...

  • Influence of prebonding cleaning on the electrical properties of the buried oxide of bond-and-etchback silicon-on-insulator materials. Ericsson, Per; Bengtsson, Stefan; Södervall, Ulf // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3472 

    Presents a study that manufactured three different groups of metal-oxide-semiconductor devices of bond-and-etchback silicon-on-insulator wafers where the buried oxide functioned as the gate dielectric. Difference of the groups; Methods used to clean the surfaces; Location of the bonded interface.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics