TITLE

High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma

AUTHOR(S)
Gao, Di; Howe, Roger T.; Maboudian, Roya
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1742
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a highly selective reactive ion etching process for 3C-SiC films using HBr-based chemistry in a commercial transformer coupled plasma (TCP) etcher. SiO[sub 2] and Si[sub 3]N[sub 4] are employed as etch masks. Etch rates for SiC, SiO[sub 2], and Si[sub 3]N[sub 4] are measured as functions of chamber pressure and TCP source power. Etch rate ratios of 20:1 for SiC/SiO[sub 2] and 22:1 for SiC/Si[sub 3]N[sub 4] are achieved. In addition, a SiC micromechanical resonator is fabricated to demonstrate integration of the etching process into conventional microfabrication technologies.
ACCESSION #
9275564

 

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