TITLE

Ni-seeding effects on the properties of polycrystalline silicon–germanium grown at low temperature

AUTHOR(S)
Zhang, Jianjun; Shimizu, Kousaku; Hanna, Junichi
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1745
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the Ni-seeding effects on the low-temperature growth of the polycrystalline silicon-germanium (poly-Si[sub x]Ge[sub 1-x]) films by reactive thermal chemical vapor deposition with Si[sub 2]H[sub 6] and GeF[sub 4]. Very thin Ni films (<2 nm) were deposited on the glass substrates by electron beam evaporation in prior to poly-Si[sub x]Ge[sub 1-x] deposition. The crystallinity and electrical performance of the poly-Si[sub x]Ge[sub 1-x] films were characterized, p-channel bottom-gate thin-film transistors (TFTs) were also fabricated with these films to evaluate the effect of Ni seeding on device performance. We found that a certain amount of Ni, i.e., less than 0.5 nm, impacts upon the grain size and crystallinity without additional degradation of electrical properties due to the incorporation of Ni in the film. A 0.2 nm equivalent thickness of Ni gives the best crystallinity and the largest grain size (135 nm) and results in the highest mobility (31 cm²/V s) in p-channel TFTs fabricated on SiO[sub 2]/Si substrates.
ACCESSION #
9275563

 

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