TITLE

High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH[sub 3] post-deposition anneal

AUTHOR(S)
Akbar, Mohammad Shahariar; Gopalan, S.; Cho, H.-J.; Onishi, K.; Choi, R.; Nieh, R.; Kang, C. S.; Kim, Y. H.; Han, J.; Krishnan, S.; Lee, Jack C.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1757
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical and chemical characteristics of metal-oxide semiconductor field-effect transistors (MOSFETs) prepared by low-thermal-budget (∼600 °C) NH[sub 3] post-deposition annealing of HfSiON gate dielectric have been investigated. Compared to control Hf-silicate, HfSiON showed excellent thickness scalability, low leakage current density (J), and superior thermal stability. With proper annealing-time optimization, effective oxide thickness as low as 9.2 Å with Or< 100 mA/cm² at gate voltage V[sub g] = -1.5 V has been achieved. C-V hysteresis of HfSiON MOSFET was found to be small (<20 mV). Unlike NH[sub 3] surface nitridation (NH[sub 3] pre-treatment prior to Hf-silicate deposition), no degradation in G[sub m] (transconductance), I[sub d]-V[sub g], (drain current-gate voltage), or I[sub d] - V[sub d] (drain current-drain voltage) characteristics has been observed.
ACCESSION #
9275558

 

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