Electromechanical properties of Nd-doped Bi[sub 4]Ti[sub 3]O[sub 12] films: A candidate for lead-free thin-film piezoelectrics

Maiwa, Hiroshi; Iizawa, Naoya; Togawa, Daichi; Hayashi, Takashi; Sakamoto, Wataru; Yamada, Mio; Hirano, Shin-ichi
March 2003
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1760
Academic Journal
Neodymium-doped Bi[sub 4]Ti[sub 3]O[sub 12] (BNT) films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. Bi[sub 4]Ti[sub 3]O[sub 12], Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12], and Bi[sub 3.25]Nd[sub 0.75]Ti[sub 3]O[sub 12] films were fabricated by chemical solution deposition on Pt/TiO[sub x]/SiO[sub 2]/Si substrates. Nd substitution promoted random orientation with low (001) diffraction peaks. The 1-μm-thick Bi[sub 3.25]Nd[sub 0.75]Ti[sub 3]Ti[sub 3]O[sub 12] film annealed at 750°C exhibited a remanent polarization of 26 μC/cm². Typical butterfly field-induced strain loops were obtained in the BNT film capacitors. The electrically induced strain is 8.4 × 10[sup -4] under the bipolar driving field of 220 kV/cm. These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics.


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