Ordering self-assembled islands without substrate patterning

Capellini, G.; De Seta, M.; Spinella, C.; Evangelisti, F.
March 2003
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1772
Academic Journal
The self-patterning of the strain field that arises in the growth of stacked multilayers of heteroepitaxial islands, together with the capability of tuning the island size by acting on the deposition temperature, are here exploited to obtain self-organization, resulting in well-ordered clusters composed of regularly disposed, nanosized islands. Our results show that the island spatial distribution can be tuned from a random one to a well-ordered square lattice of island clusters, and that the number of islands inside each cluster can be selected. Moreover, due to the dipole repulsive interaction between adjacent islands, the islands themselves arrange in an ordered fashion inside a single cluster along the same [010]-[100] crystalline directions of the long-range cluster ordering.


Related Articles

  • A criterion for the transition from pyramidal to dome shape of coherent germanium nanoclusters growing on silicon. Safonov, K. L.; Trushin, Yu. V. // Technical Physics Letters;Dec2007, Vol. 33 Issue 12, p990 

    A physical criterion is proposed for a change in the equilibrium shape of elastically strained germanium nanoclusters growing on a silicon substrate under the conditions of molecular beam expitaxy. The critical size of pyramidal Ge clusters is estimated and compared to the available experimental...

  • Vacancy-type defects in molecular beam epitaxy low temperature grown GaAs, a positron beam lifetime study. Sto¨rmer, J.; Triftsha¨user, W.; Hozhabri, N.; Alavi, K. // Applied Physics Letters;9/23/1996, Vol. 69 Issue 13, p1867 

    Positron beam lifetime spectroscopy has been utilized to study the depth distribution of vacancy-type defects in molecular beam epitaxy GaAs grown at low temperature. Lifetime spectra were measured as a function of positron energy. From the analysis of the positron lifetime in as-grown and...

  • The onset of secondary phase precipitation during synthesis of heteroepitaxial.... Herbots, Nicole; Peihua Ye // Applied Physics Letters;2/5/1996, Vol. 68 Issue 6, p782 

    Examines the onset of secondary phase precipitation during synthesis of heteroepitaxial Si[sub 1-x-y]Ge[sub x]C[sub y] solid solutions on silicon(100). Combination of ion and molecular beam epitaxy; Lack of silicon carbide precipitates; Exhibition of germanium deficient, coherent, secondary...

  • Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy. Hase, A.; Künzel, H.; Zahn, D. R. T.; Richter, W. // Journal of Applied Physics;8/15/1994, Vol. 76 Issue 4, p2459 

    Provides information on a study which presented an assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy. Indication of the observed reduction of the separation of the InAs- and AlAs-like longitudinal optical phonon modes; Consideration taken in the...

  • Welcome to clusterworld. Palmer, Richard // New Scientist;02/22/97, Vol. 153 Issue 2070, p38 

    Explores the potentials of microclusters. Possibility of creating new materials; Discoveries about microclusters; Ideas about cluster deposition.

  • Photoluminescence and Raman scattering in spatially inhomogeneous heteroepitaxial InGaN layers. Pavlovskii, V.; Lutsenko, E.; Yablonskii, G.; Kolomys, A.; Strelchuk, V.; Avramenko, E.; Valakh, M. // Journal of Applied Spectroscopy;Sep2011, Vol. 78 Issue 4, p518 

    Spatial inhomogeneities of the indium distribution in InGaN epitaxial layers grown on sapphire substrate with a GaN buffer layer were investigated using photoluminescence (PL) in addition to confocal scanning Raman spectroscopy (RS) and PL. Broad emission bands from In-enriched InGaN...

  • Structural characterization of iron silicide nanoclusters in Si/FeSi heterosystems using magneto-optic ellipsometry. Kosyrev, N.; Zabluda, V.; Varnakov, S.; Shvets, V.; Rykhlitsky, S.; Spesivtsev, E.; Prokop'ev, V. // Journal of Structural Chemistry;Dec2010 Supplement 1, Vol. 51, p100 

    The initial stages of iron film growth on monocrystalline silicon were studied using a combined method of magneto-optic ellipsometry. The growth of iron silicide nanoclusters on the silicon surface was shown to occur at thickness d < 1.2 nm in non-magnetic phase.

  • Communication: Stable carbon nanoarches in the initial stages of epitaxial growth of graphene on Cu(111). Van Wesep, Robert G.; Chen, Hua; Zhu, Wenguang; Zhang, Zhenyu // Journal of Chemical Physics;5/7/2011, Vol. 134 Issue 17, p171105 

    To fully exploit the device potential of graphene, reliable production of large-area, high-quality samples is required. Epitaxial growth on metal substrates have shown promise in this regard, but further improvement would be facilitated by a more complete understanding of the atomistic processes...

  • Contact epitaxy in multiple cluster deposition. Meinander, K.; Järvi, T. T.; Nordlund, K. // Applied Physics Letters;12/18/2006, Vol. 89 Issue 25, p253109 

    The specific properties of cluster-assembled thin films depend heavily on the size of deposited clusters as well as the energy with which they impact the substrate. When depositing at thermal energies, small enough clusters will align completely epitaxially with a smooth substrate, whereas...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics