TITLE

Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors

AUTHOR(S)
Mercha, A.; Simoen, E.; van Meer, H.; Claeys, C.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1790
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A noise overshoot phenomenon occurring in the ohmic regime is described in fully depleted and partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with 2.5 nm nitrided gate oxide. It is characterized by a peak in the current noise spectral density S[sub 1] versus the front gate voltage V[sub GS], whereby the peak amplitude can be several orders of magnitude higher than the background 1/f noise. In addition, it is shown that the corresponding spectrum has a Lorentzian shape. Associated with this noise peak is a second maximum in the device transconductance. It is believed that the mechanism of this excess noise is similar as for the kink-related noise overshoot, found in saturation. However, the origin of this floating-body effect is believed to be related to electron valence-band tunneling through the thin dielectric and occurring for a sufficiently large gate voltage.
ACCESSION #
9275546

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics