TITLE

Orientation-dependent ionization potential of CuPc and energy level alignment at C60/CuPc interface

AUTHOR(S)
Wang, Chenggong; Turinske, Alexander J.; Gao, Yongli
PUB. DATE
December 2013
SOURCE
Applied Physics B: Lasers & Optics;Dec2013, Vol. 113 Issue 3, p361
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electronic structure evolution of interfaces of fullerene (C 60) with copper phthalocyanine (CuPc) on highly oriented pyrolytic graphite (HOPG) and on native silicon oxide has been investigated with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. The LUMO edge of C 60 was found to be pinned at the interface with CuPc on SiO 2. A substantial difference in the electron affinity of CuPc on the two substrates was observed as the orientation of CuPc is lying flat on HOPG and standing up on SiO 2. The ionization potential and electron affinity of C 60 were not affected by the orientation of CuPc due to the spherical symmetry of C 60 molecules. We observed band bending in C 60 on the standing-up orientation of CuPc molecules, while the energy levels of C 60 on the flat-lying orientation of CuPc molecules were observed to be flat. The observation points to a dependence of photoexcited charge transfer on the relative molecular orientation at the interface.
ACCESSION #
92671942

 

Related Articles

  • Molecular orientation of copper phthalocyanine thin films on different monolayers of fullerene on SiO2 or highly oriented pyrolytic graphite. Chenggong Wang; Xiaoliang Liu; Congcong Wang; Xumei Xu; Youzhen Li; Fangyan Xie; Yongli Gao // Applied Physics Letters;3/23/2015, Vol. 106 Issue 12, p1 

    The interface electronic structures of copper phthalocyanine (CuPc) have been studied using ultraviolet photoemission spectroscopy as different monolayers of C60 were inserted between CuPc and a SiO2 or highly ordered pyrolytic graphite (HOPG) substrate. The results show that CuPc has standing...

  • Graphene-enhanced intermolecular interaction at interface between copper- and cobalt-phthalocyanines. Wei-Dong Dou; Shu-Ping Huang; Chun-Sing Lee // Journal of Chemical Physics;2015, Vol. 143 Issue 13, p1 

    Interfacial electronic structures of copper-phthalocyanine (CuPc), cobalt-phthalocyanine (CoPc), and graphene were investigated experimentally by using photoelectron spectroscopy. While the CuPc/graphene interface shows flat band structure and negligible interfacial dipole indicating quite weak...

  • Interface instabilities and electronic properties of ZrO2 on silicon (100). Fulton, C. C.; Cook Jr., T. F.; Lucovsky, G.; Nemanich, R. J. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2665 

    The interface stability of Zr-based high-k dielectrics with an oxide buffer layer was explored with x-ray (hÏ…=1254 eV) and ultraviolet (hÏ…=21.2 eV) photoemission spectroscopy. Zirconium oxide films were grown and characterized in situ in a stepwise sequence to explore their chemical...

  • Substrate effect on the electronic structures of CuPc/graphene interfaces. Wu, Qi-Hui; Hong, Guo; Ng, T. W.; Lee, S. T. // Applied Physics Letters;4/16/2012, Vol. 100 Issue 16, p161603 

    The interfacial electronic structures of copper phthalocyanine (CuPc) deposited on a single-layer graphene (SLG) film prepared on Cu and SiO2 substrates (SLG/Cu and SLG/SiO2) were investigated using ultraviolet photoelectron spectroscopy. The ionization energy of CuPc on SLG/Cu and SLG/SiO2...

  • Dopant local bonding and electrical activity near Si(001)-oxide interfaces. Zhiyong Zhou; Steigerwald, Michael L.; Friesner, Richard A.; Brus, Louis; Hybertsen, Mark S. // Journal of Applied Physics;10/1/2005, Vol. 98 Issue 7, p076105 

    Electronic structure calculations based on a density-functional approach have been performed for P, As, B, and Al subsitutional dopants near the Si(001)-oxide interface. The structures are geometrically optimized for each charge state. P and As geometries show a strong distortion when neutral,...

  • Effects of suboxide layers on the electronic properties of Si(100)/SiO2 interfaces: Atomistic multi-scale approach. Kim, Byung-Hyun; Kim, Gyubong; Park, Kihoon; Shin, Mincheol; Chung, Yong-Chae; Lee, Kwang-Ryeol // Journal of Applied Physics;Feb2013, Vol. 113 Issue 7, p073705 

    A multi-scale approach connecting the atomistic process simulations to the device-level simulations has been applied to the Si(100)/SiO2 interface system. The oxidation of Si(100) surface was simulated by the atomic level molecular dynamics, the electronic structure of the resultant...

  • Comment on: 'Random telegraph signals arising from fast interface states in.... Uren, M.J.; Ming-Horn Tsai // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1443 

    Comments on the mensuration of random telegraph signals (RTS) from fast silicon-silicon oxide interface states from slow states. Use of high sampling rates; Features of RTS published earlier; Description of interface states with common chemical nature and environment.

  • Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating. Kimura, Mutsumi; Inoue, Satoshi; Shimoda, Tatsuya; Tam, Simon W.-B.; Lui, O. K. Basil; Migliorato, Piero; Nozawa, Ryoichi // Journal of Applied Physics;3/15/2002, Vol. 91 Issue 6, p3855 

    Trap states at the oxide-silicon interface and grain boundary in laser-crystallized polycrystalline-silicon thin-film transistors were extracted. The oxide-silicon interface traps and grain boundary traps can be extracted using the low-frequency capacitance–voltage characteristic and...

  • Direct SiO[sub 2]/beta-SiC(100)3x2 interface formation from 25 degree Centigrade to 500 degree.... Semond, F.; Douillard, L. // Applied Physics Letters;4/8/1996, Vol. 68 Issue 15, p2144 

    Examines direct silicon dioxide/beta-silicon carbon interface formation at 25 degrees to 500 degrees Centigrade. Investigation by core level and valence band photoemission spectroscopies; Significance of low molecular oxygen exposures to surface reconstruction; Enhancement of silicon dioxide...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics