Determination of built-in electric fields in quaternary InAlGaN heterostructures

Teisseyre, H.; Suski, T.; Łepkowski, S. P.; Anceau, S.; Perlin, P.; Lefebvre, P.; Konczewicz, L.; Hirayama, H.; Aoyagi, Y.
March 2003
Applied Physics Letters;3/10/2003, Vol. 82 Issue 10, p1541
Academic Journal
A study of internal electric field contribution to the light emission mechanism of InAlGaN based multiquantum wells was performed. To determine the magnitude of the built-in electric field we employed: (i) theoretical estimation of the piezoelectric and spontaneous polarizations, (ii) analysis of the emission energy as a function of the quantum well width, (iii) hydrostatic pressure experiments, and finally (iv) measurements of photoluminescence decay. Performed calculations gave high magnitude of the built-in electric field. On the contrary, independently of the quantum well width the pressure shift of the light emission energy and the photoluminescence decay time showed almost constant values. These observations are interpreted as evidence of a lack of the built-in electric field in the used quaternary quantum wells. Possible reasons for the controversies between theory and experiment are suggested.


Related Articles

  • Calculation of electric field and optical transitions in InGaN/GaN quantum wells. Christmas, Ursula M. E.; Andreev, A. D.; Faux, D. A. // Journal of Applied Physics;10/1/2005, Vol. 98 Issue 7, p073522 

    We present analytical expressions for internal electric field and strain in single and multiple quantum wells, incorporating electromechanical coupling, spontaneous polarization, and periodic boundary conditions. Internal fields are typically 2% lower than the fields calculated using an...

  • Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well. Jeon, H. C.; Lee, S. J.; Kang, T. W.; Park, S. H.; Yeo, Yung Kee; George, T. F. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p581 

    We have investigated optical properties as a function of internal and external fields in the quantum well (QW). Optical properties of CdZnO/MgZnO QW structures are investigated by using many-body effects. The CdZnO/MgZnO QW structure with high Cd composition is found to have smaller optical gain...

  • Intrinsic electric fields in AlGaN quantum wells. Marcinkevicˇius, S.; Pinos, A.; Liu, K.; Veksler, D.; Shur, M. S.; Zhang, J.; Gaska, R. // Applied Physics Letters;2/19/2007, Vol. 90 Issue 8, p081914 

    Intrinsic electric fields in AlxGa1-xN/AlyGa1-yN quantum wells embedded into p-i-n structures are studied using photoluminescence experiments. Spectral shifts induced by external bias and screening by photoexcited carriers allow evaluating the intrinsic fields caused by piezoelectric and...

  • Barrier composition dependence of the internal electric field in ZnO/Zn1-xMgxO quantum wells. Bretagnon, T.; Lefebvre, P.; Guillet, T.; Taliercio, T.; Gil, B.; Morhain, C. // Applied Physics Letters;5/14/2007, Vol. 90 Issue 20, p201912 

    Time-integrated photoluminescence experiments are used to study the excitonic optical recombinations in wurtzite ZnO/Zn1-xMgxO single quantum wells of varying widths and magnesium compositions. By comparing experimental results with a variational calculation of excitonic energies, the authors...

  • Determining the electric field in [111] strained-layer quantum wells. Tober, Richard L.; Bahder, Thomas B. // Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2369 

    Investigates the electric field in [111] strained-layer quantum wells (QW). Determination of the polarization of QW; Mechanism for attaining the critical reverse bias of QW; Uses of the depletion model of the p-i-n diode with an embedded QW.

  • Transport of Photoexcited Electron-Hole Plasma in GaN/AlGaN Quantum Well. Korona, K. P.; Caban, P.; Strupinski, W. // Acta Physica Polonica, A.;Nov2009, Vol. 116 Issue 5, p927 

    We report spatially resolved photocurrent measurements showing transport of excitation on long distances in plane of a 6 nm GaN/Al0:1Ga0:9N quantum well. The strong field present in nitrides (due to large spontaneous and piezoelectric polarizations) leads to lower recombination rates of...

  • Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells. Wierer, J. J.; Koleske, D. D.; Lee, S. R. // Applied Physics Letters;3/12/2012, Vol. 100 Issue 11, p111119 

    The performance of InGaN/GaN multiple quantum well (MQW) solar cells containing 15 periods of 2.7 nm thick In0.21Ga0.79N wells and three different GaN barriers thicknesses of 3.0 nm, 6.3 nm, and 10.0 nm is investigated. Increasing barrier thickness results in absorption at lower energies,...

  • Composition dependence of polarization fields in GaInN/GaN quantum wells. Hangleiter, A.; Hitzel, F.; Lahmann, S.; Rossow, U. // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1169 

    We report an experimental determination of the internal polarization field in GaInN/GaN quantum wells, due to piezoelectric and spontaneous polarization, utilizing the quantum confined Stark effect, with fields as large as 3.1 MV/cm at 22% In. From its dependence on quantum well composition and...

  • Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III–V nitride quantum wells. Wan, Shou-pu; Xia, Jian-bai; Chang, Kai // Journal of Applied Physics;12/15/2001, Vol. 90 Issue 12, p6210 

    A theoretical model accounting for the macropolarization effects in wurtzite III–V nitrides quantum wells (QWs) is presented. Energy dispersions and exciton binding energies are calculated within the framework of effective-mass theory and variational approach, respectively....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics