Vacancies and voids in hydrogenated amorphous silicon

Smets, A. H. M.; Kessels, W. M. M.; van de Sanden, M. C. M.
March 2003
Applied Physics Letters;3/10/2003, Vol. 82 Issue 10, p1547
Academic Journal
The hydride configurations in the hydrogenated amorphous silicon (a-Si:H) network have been studied by means of infrared absorption spectroscopy. The results on the film mass density of a-Si:H deposited by means of an expanding thermal plasma reveal the presence of two distinct regions in terms of hydrogen content and microstructure: below approximately 14 at. % H a-Si:H contains predominantly divacancies decorated by hydrogen, above 14 at. % H a-Si:H contains microscopic voids. These two distinct regions provide additional information on the origin of the low and high hydride stretching modes at 1980-2010 and 2070-2100 cm[sup -1], respectively.


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