TITLE

Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium

AUTHOR(S)
Tao, Meng; Udeshi, Darshak; Basit, Nasir; Maldonado, Eduardo; Kirk, Wiley P.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/10/2003, Vol. 82 Issue 10, p1559
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Dangling bonds and surface states are inherent to semiconductor surfaces. By passivating dangling bonds on the silicon (001) surface with a monolayer of selenium, surface states are removed from the band gap. Magnesium contacts on selenium-passivated silicon (001) behave ohmically, as expected from the work function of magnesium and the electron affinity of silicon. After rapid thermal annealing and hot-plate annealing, magnesium contacts on selenium-passivated silicon (001) show better thermal stability than on hydrogen-passivated silicon (001), which is attributed to the suppression of silicide formation by selenium passivation.
ACCESSION #
9214412

 

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