Vertical and lateral mobilities in n-(Ga, Mn)N

Kim, Jihyun; Ren, F.; Thaler, G. T.; Frazier, R.; Abernathy, C. R.; Pearton, S. J.; Zavada, J. M.; Wilson, R. G.
March 2003
Applied Physics Letters;3/10/2003, Vol. 82 Issue 10, p1565
Academic Journal
Lateral electron mobilities in 0.2-µm-thick n-(Ga, Mn)N films were obtained from Hall measurements, producing values of 116∼ 102 cm²/V s in the temperature range from 298 to 373 K. These values are comparable to, but slightly lower than, electron mobilities in n-GaN of the same electron concentration. By sharp contrast, analysis of the reverse saturation current in mesa Schottky diodes fabricated in the n-(Ga, Mn)N show vertical electron mobilities of 840∼336 cm²/V s in the temperature range from 298 to 373 K. This is consistent with a reduction in electron scattering by charged dislocations for vertical transport geometries [M. Misra, A. V. Sampath, and T. D. Moustakas, Appl. Phys. Lett. 76, 1045 (2000)].


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