Shot noise in negative-differential-conductance devices

Song, W.; Mendez, E. E.; Kuznetsov, V.; Nielsen, B.
March 2003
Applied Physics Letters;3/10/2003, Vol. 82 Issue 10, p1568
Academic Journal
We have compared the shot-noise properties at T=4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current-voltage characteristics. While the noise spectral density of the former device was greatly enhanced over the Poissonian value of 2 eI in the NDC region, that of the latter device remained 2 eI. This result implies that charge accumulation, not system instability, is responsible for shot-noise enhancement in NDC devices.


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