Discussion of “The Development of the Concept of Vacancy-Mediated Substitutional Diffusion: The Important Contribution from Fredrick Seitz”

Paul, Aloke
December 2013
Metallurgical & Materials Transactions. Part A;Dec2013, Vol. 44 Issue 12, p5622
Academic Journal
The article discusses the development of the concept of vacancy-mediated substitutional diffusion and the contributions to this by physicist Fredrick Seitz. It also discusses contributions and research done by both Seitz and the chemist and metallurgist Ernest Kirkendall on the diffusion mechanism in metallic microstructures. Through research and experiments on copper by Seitz, it was concluded that diffusion occurs via the vacancy mechanism.


Related Articles

  • Space-dependent self-diffusion processes in molten copper halides: A molecular dynamics study. Alcaraz, Olga; Trulla`s, Joaquim // Journal of Chemical Physics;10/15/2001, Vol. 115 Issue 15 

    This work is concerned with single ion dynamics in molten copper halides (CuI and CuCl) which exhibit fast ionic conduction before melting. The self-dynamic structure factor of the two ionic species in each melt have been calculated by molecular dynamics simulations and the corresponding...

  • Diffuse emission and control of copper in urban surface runoff. Boller, M.A.; Steiner, M. // Water Science & Technology;2002, Vol. 46 Issue 6/7, p173 

    Examines the contribution of copper washed off from roofs and roads to diffuse copper pollution of urban environments in Switzerland. Formulation of a strategy to avoid or replace copper containing materials on roofs and facades; Suggestion of the use of an adsorber system to control the...

  • Study of diffusion and cluster formation of copper deposition on polyimide by optical.... Zhang, J.Y.; Shen, Y.R.; Soane, D.S.; Freilich, S.C. // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1305 

    Demonstrates the use of optical second harmonic generation to probe the diffusion and cluster formation of copper (Cu) deposition on polyimide. Domination of surface diffusion of Cu to form clusters over Cu diffusion into the polyimide; Efficiency of thin layer titanium in blocking Cu diffusion.

  • Mechanism of Copper Diffusion over the Si(110) Surface. Dolbak, A. E.; Zhachuk, R. A.; Olshanetsky, B. Z. // Semiconductors;Sep2002, Vol. 36 Issue 9, p958 

    The mechanism of Cu diffusion over a clean Si(110) surface was studied by Auger electron spectroscopy and low-energy electron diffraction in the temperature range from 500 to 650�C. It is shown that the Cu transport over the Si(110) surface proceeds by Cu atom diffusion through the Si bulk...

  • The interface formation of copper and low dielectric constant fluoro-polymer: Plasma surface... Du, M.; Opila, R. L. // Journal of Applied Physics;2/1/1999, Vol. 85 Issue 3, p1496 

    Studies the bulk and surface diffusion of copper deposited on a treated low dielectric constant fluoropolymer using x-ray photoelectron spectroscopy. Experimental details; Results and discussion; Conclusions.

  • Atomic-layer-deposited WN[sub x]C[sub y] thin films as diffusion barrier for copper metallization. Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko // Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4486 

    The properties of WN[SUBx]C[SUBy] films deposited by atomic layer deposition (ALD) using WF[SUB6], NH[SUB3], and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about...

  • New aspects of copper diffusion in semi-insulating gallium arsenide. Griehl, St.; Herms, M.; Klo¨ber, J.; Niklas, J. R.; Siegel, W. // Applied Physics Letters;9/16/1996, Vol. 69 Issue 12, p1767 

    The diffusion of copper in semi-insulating liquid-encapsulated-Czochralski-grown gallium arsenide at 800 °C was examined by photoluminescence, photoetching, secondary ion mass spectroscopy, and temperature dependent Hall measurements. A diffusion rate of 4.5×10-6 cm2 s-1 was obtained. It...

  • Diffusion in nanolayers as measured by atom probing. Keilonat, Christian; Camus, Eric // Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2007 

    Measures the diffusion of copper/nickel nanolayers by atom probing. Effects of diffusion in thin layer systems; Summary of the principle of atom probe technique; Representation of a nanolayer specimen as used for field-ion microscope with atom probe.

  • Interstitial copper-related center in n-type silicon. Istratov, A.A.; Hieslmair, H. // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2349 

    Measures the n-type silicon samples by deep level transient spectroscopy (DLTS) after copper diffusion and quenching. Role of copper for silicon device fabrication; Details on the amplitude of DLTS peak at room temperature; Evaluation on the recombination activity of interstitial copper in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics