TITLE

The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

AUTHOR(S)
Choi, Sukwon; Heller, Eric; Dorsey, Donald; Vetury, Ramakrishna; Graham, Samuel
PUB. DATE
October 2013
SOURCE
Journal of Applied Physics;Oct2013, Vol. 114 Issue 16, p164501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors (HEMTs). This combined analysis was correlated with electrical step stress tests to determine the influence of mechanical stress on the degradation of actual devices under diverse bias conditions. It was found that the total stress as opposed to one dominant stress component correlated the best with the degradation of the HEMT devices. These results suggest that minimizing the total stress as opposed to the inverse piezoelectric stress in the device is necessary in order to avoid device degradation which can be accomplished through various growth methods.
ACCESSION #
91764246

 

Related Articles

  • Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors. Rousseau, M.; Soltani, A.; De Jaeger, J. C. // Applied Physics Letters;9/17/2012, Vol. 101 Issue 12, p122101 

    This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the...

  • Influence of AlGaN and InGaN Back Barriers on the Performance of AlGaN/GaN HEMT. Singh, Shreyash Pratap; Chaturvedi, Nidhi // IETE Technical Review;Feb2016, Vol. 33 Issue 1, p40 

    This paper does a comparative analysis of the effect of AlGaN and InGaN back barriers on the current and breakdown voltage characteristics of Al0.25Ga0.75N/GaN high electron mobility transistors (HEMTs) grown on sapphire substrates. Compared with the conventional GaN HEMTs, the introduction of a...

  • Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics. Agboton, Alain; Defrance, Nicolas; Altuntas, Philippe; Lecourt, François; Douvry, Yannick; Hoel, Virginie; Soltani, Ali; De Jaeger, Jean-Claude // European Physical Journal - Applied Physics;Nov2013, Vol. 64 Issue 2, p00 

    This paper reports on the temperature dependent threshold voltage analysis of AlGaN/GaN High electron mobility transistors (HEMTs) in order to investigate the trap effects occurring in these devices. Measurements are performed in pulse configuration to emphasize the gate-lag and drain-lag...

  • High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor. Sun, J. D.; Sun, Y. F.; Wu, D. M.; Cai, Y.; Qin, H.; Zhang, B. S. // Applied Physics Letters;1/2/2012, Vol. 100 Issue 1, p013506 

    Using only optical lithography, we have fabricated a GaN/AlGaN high-electron mobility transistor with distinctive source and drain antennas electrically isolated from the electron channel. Working at room temperature, it efficiently detects terahertz radiation via self-mixing, with a...

  • Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization. Sung Park, Pil; Nath, Digbijoy N.; Krishnamoorthy, Sriram; Rajan, Siddharth // Applied Physics Letters;2/6/2012, Vol. 100 Issue 6, p063507 

    We propose and demonstrate a two dimensional/three dimensional hybrid channel AlGaN/GaN high electron mobility transistor (HEMT) structure with a flat transconductance profile using polarization-induced channel engineering. A quasi three dimensional electron gas profile with 5-6 nm of vertical...

  • Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection. Thapa, Resham; Alur, Siddharth; Kim, Kyusang; Tong, Fei; Sharma, Yogesh; Kim, Moonil; Ahyi, Claude; Dai, Jing; Wook Hong, Jong; Bozack, Michael; Williams, John; Son, Ahjeong; Dabiran, Amir; Park, Minseo // Applied Physics Letters;6/4/2012, Vol. 100 Issue 23, p232109 

    Label-free electrical detection of deoxyribonucleic acid (DNA) hybridization was demonstrated using an AlGaN/GaN high electron mobility transistor (HEMT) based transducer with a biofunctionalized gate. The HEMT DNA sensor employed the immobilization of amine-modified single strand DNA on the...

  • Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors. Bajo, M. Montes; Sun, H.; Uren, M. J.; Kuball, M. // Applied Physics Letters;6/2/2014, Vol. 104 Issue 22, p1 

    The evolution of AlGaN/GaN high electron mobility transistors under off-state stress conditions is studied by gate leakage current (lg) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature. It is found that the number of off-state failure sites as...

  • Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors. Asubar, Joel T.; Zenji Yatabe; Tamotsu Hashizume // Applied Physics Letters;8/4/2014, Vol. 105 Issue 5, p1 

    Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the ID-VDS curves at high VDS regime,...

  • Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions. Maiboroda, I.; Andreev, A.; Perminov, P.; Fedorov, Yu.; Zanaveskin, M. // Technical Physics Letters;Jun2014, Vol. 40 Issue 6, p488 

    Specific features of how nonalloyed ohmic contacts to the 2D conducting channel of high-electron-mobility transistors based on AlGaN/(AlN)/GaN heterostructures are fabricated via deposition of heavily doped n-GaN through a SiO mask by ammonia molecular-beam epitaxy have been studied. The...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics