Low-Threshold-Current 1.2–1.5μm Laser Diodes Based on AlInGaAs/InP Heterostructures

Slipchenko, S. O.; Lyutetskiı, A. V.; Pikhtin, N. A.; Fetisova, N. V.; Leshko, A. Yu.; Ryaboshtan, Yu. A.; Golikova, E. G.; Tarasov, I. S.
February 2003
Technical Physics Letters;Feb2003, Vol. 29 Issue 2, p115
Academic Journal
Separate confinement AlInGaAs/InP multiwell laser heterostructures emitting in a wavelength range of 1.2-1.5 μm have been synthesized by metalorganic vapor-phase epitaxy. The threshold current of laser diodes with a strip width of 4.5 μm and a cavity length of 200 μm was as low as 10 mA. With a cavity length of 1.0 mm, the threshold current density was 500-650 A/cm². The laser diodes can operate in a continuous regime without forced cooling at an ambient temperature of up to 170°C. In a temperature range from 10 to 80°C, the characteristic temperature parameter TO reached up to 110 K.


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