GaN-based waveguide devices for long-wavelength optical communications

Hui, R.; Taherion, S.; Wan, Y.; Li, J.; Jin, S. X.; Lin, J. Y.; Jiang, H. X.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1326
Academic Journal
Refractive indices of Al[sub x]Ga[sub 1-x]N with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength window. The feasibility of developing photonic integrated circuits based on III-nitride wide-band-gap semiconductors for fiber-optical communications has been discussed.


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