Al[sub 0.95]Ga[sub 0.05]As[sub 0.56]Sb[sub 0.44] for lateral oxide-confinement layer in InP-based devices

Reddy, M. H. M.; Buell, D. A.; Huntington, A. S.; Asano, T.; Koda, R.; Feezell, D.; Lofgreen, D.; Coldren, L. A.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1329
Academic Journal
We report a lateral oxide-confinement layer for InP-based devices using lattice-matched AlGaAsSb. The confinement-layer-induced excess loss at different widths was extracted after de-embedding the losses due to carrier diffusion, nonradiative recombination, and changes in internal injection efficiency. The results show that AlGaAsSb oxide acts as an excellent confinement layer, and shows no excess loss down to a width of 4 µm.


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