Strong green luminescence in quaternary InAlGaN thin films

Feng, Shih-Wei; Cheng, Yung-Chen; Chung, Yi-Yin; Yang, C. C.; Ma, Kung-Jeng; Yan, Chih-Chiang; Hsu, Chen; Lin, J. Y.; Jiang, H. X.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1377
Academic Journal
We observed strong green luminescence (around 2.37 eV) in two InAlGaN thin film samples, which were originally prepared for applications in the UV range. Based on the observation of the InN peaks and the extended distributions, corresponding to InGaN compounds, in the x-ray diffraction patterns, such green luminescence was attributed to the formation of indium-rich clusters, which formed localized states, in the quaternary films of low indium content (2%). Carrier trapping of such localized states, particularly when carriers received thermal energy such that they could overcome certain potential barriers around the clusters, resulted in strong green luminescence. The observed optical behaviors, including the blueshift phenomenon of photoluminescence spectral peak position in varying temperature, showed that the green luminescence was quite different from the previously reported yellow luminescence, which resulted from defects.


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