TITLE

Improved interface stability of phase-change recording media

AUTHOR(S)
Kuiper, A. E. T.; van Schijndel, M.; Tamminga, Y.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1383
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
During writing, the phase-change layer in a medium for optical recording is heated to above its melting temperature of typically 600°C. Although this situation lasts for only 10-100 ns, it is repeated many times during consecutive overwrite cycles. As a result, the phase-change layer gradually reacts with the adjacent ZnS:SiO[sub 2] isolation layers, which deteriorates the overwrite performance. Applying Rutherford backscattering spectrometry, we observed that thin caplayers of AlO[sub x]N[sub y], HfO[sub x]N[sub y], Si[sub 3]N[sub 4], or In-SnO[sub x], introduced at both interfaces of the phase-change layer, suppress this reaction adequately. Such layers appear also very beneficial for the inherently unstable interface between the Ag mirror and the ZnS:SiO[sub 2] dielectric layer.
ACCESSION #
9176123

 

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