Improved interface stability of phase-change recording media

Kuiper, A. E. T.; van Schijndel, M.; Tamminga, Y.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1383
Academic Journal
During writing, the phase-change layer in a medium for optical recording is heated to above its melting temperature of typically 600°C. Although this situation lasts for only 10-100 ns, it is repeated many times during consecutive overwrite cycles. As a result, the phase-change layer gradually reacts with the adjacent ZnS:SiO[sub 2] isolation layers, which deteriorates the overwrite performance. Applying Rutherford backscattering spectrometry, we observed that thin caplayers of AlO[sub x]N[sub y], HfO[sub x]N[sub y], Si[sub 3]N[sub 4], or In-SnO[sub x], introduced at both interfaces of the phase-change layer, suppress this reaction adequately. Such layers appear also very beneficial for the inherently unstable interface between the Ag mirror and the ZnS:SiO[sub 2] dielectric layer.


Related Articles

  • Photodetectors: Nanowire arrays. Horiuchi, Noriaki // Nature Photonics;Mar2013, Vol. 7 Issue 3, p166 

    The article reports on successful synthesis and use of nanowires made of arrays of single-crystal zinc arsenide in field-effect transistors (FETs) and visible-light photodetectors by the scientist Gui Chen and co-workers from Huazhong University of Science and Technology in Beijing in China.

  • Structural and compositional integrity of lattice-matched ZnSe0.95S0.05 on (100) orientated GaAs. Yates, Heather M.; Williams, John O. // Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p809 

    Lattice-matched ZnSe0.95S0.05 epitaxial layers have been grown on (100) oriented GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy. Blue room-temperature photoluminescence is observed and the interface is both compositionally and structurally abrupt as shown by secondary...

  • Formation and electron activation energy of self-assembled CdTe quantum wires grown on ZnTe buffer layers. Kim, T. W.; Lee, E. H.; Lee, K. H.; Kim, J. S.; Park, H. L. // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4235 

    Self-assembled CdTe quantum wires (QWRs) were grown on ZnTe buffer layers by using molecular-beam epitaxy. Atomic force microscopy images showed that preferentially oriented CdTe QWRs were formed on ZnTe buffer layers. The activation energy of the electrons confined in the CdTe QWRs, as obtained...

  • Improved conductivity and mechanism of carrier transport in zinc oxide with embedded silver layer. Han, H.; Theodore, N. D.; Alford, T. L. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p013708 

    The effects of an embedded silver layer on the electrical and optical properties of zinc oxide (ZnO)/silver (Ag)/zinc oxide (ZnO) layered composite structures on polymer substrates have been investigated. We have engineered transparent conducting oxide structures with greatly improved...

  • Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application. Chung, T. F.; Luo, L. B.; He, Z. B.; Leung, Y. H.; Shafiq, I.; Yao, Z. Q.; Lee, S. T. // Applied Physics Letters;12/3/2007, Vol. 91 Issue 23, p233112 

    Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful...

  • Tuning structural, electrical, and optical properties of oxide alloys: ZnO1-xSex. Mayer, Marie A.; Yu, Kin Man; Haller, Eugene E.; Walukiewicz, Wladek // Journal of Applied Physics;Jun2012, Vol. 111 Issue 11, p113505 

    Previously we showed that it is possible to narrow the band gap of zinc oxide from 3.3 to ∼2 eV through the addition of Se. Here, we use thin film samples of ZnO1-xSex grown by pulsed laser deposition to describe in detail the effect of growth parameters (temperature, pressure, and fluence)...

  • Dielectric properties of Zn[sub 1-x]Mn[sub x]Te epilayers. Fu, S. P.; Chen, Y. F.; Wang, J. C.; Shen, J. L.; Chou, W. C. // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p2140 

    We report on the dielectric properties of Zn[sub 1-x]Mn[sub x]Te(0...x...0.268) epilayers studied by capacitance and dissipation factor measurements at a temperature of 200K

  • Pressure and temperature dependence of the static dielectric constants and elastic anomalies of ZnF2. Vassiliou, John K. // Journal of Applied Physics;2/15/1986, Vol. 59 Issue 4, p1125 

    Presents information on a study which examined the static dielectric constants of zinc difluoride. Crystal structure and optical phonons of zinc difluoride; Experimental details; Results and discussion; Conclusions.

  • Induced-dipole contributions to the conductivity and dielectric response of molten ZnCl[sub 2]. Gray-Weale, Angus; Madden, Paul A.; Wilson, Mark // Journal of Chemical Physics;10/22/2000, Vol. 113 Issue 16 

    A molecular dynamics simulation of molten ZnCl[sub 2] with a realistic interionic potential is used to evaluate the contribution of interaction-induced dipoles to the dielectric response, or equivalently, to the conductivity. The induced dipoles are included self-consistently in the interionic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics