Layer-by-layer growth of Ag on a GaN(0001) surface

Wu, Kehui; Xue, Q. Z.; Bakhtizin, R. Z.; Fujikawa, Y.; Li, X.; Nagao, T.; Xue, Q. K.; Sakurai, T.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1389
Academic Journal
A drastic change of the Ag growth mode on the GaN(0001) surface, from Stranski-Krastanov (SK) growth at low Ag flux (∼0.8 ML/min) to layer-by-layer growth at a high flux (∼60 ML/min), was observed. Based on this finding, an approach to obtain a flat epitaxial Ag film on the GaN(0001) surface, by using the high Ag flux, was demonstrated. In addition, an unreconstructed Ag-terminated GaN(0001)-1 × 1 surface was obtained by annealing the Ag film-covered GaN(0001) surface, and its structure was explained by T[sub 1]-site adatom model.


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