Photoluminescence quenching in Er-doped compounds

Zanatta, A. R.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1395
Academic Journal
The temperature-induced quenching in the photoluminescence intensity (I[sub PL]) of Er[sup 3+] ions in different semiconductor hosts is discussed in this letter. Based on a compilation of several I[sub PL](T) experimental curves, corresponding to either crystalline or amorphous Er-doped samples, and after a critical data analysis, it was possible to determine a temperature of quenching T[sub q] such that I[sub PL](T[sub q]) = 0.95 I[sub PL] (lowest T). These experimental T[sub q] values have been analyzed in terms of certain host characteristics such as optical band gap and phonon frequency. As a result of this study it was possible to state that: (i) T[sub q] strongly depends on the optical band gap and atomic structure of all studied semiconductor hosts; (ii) the host phonon frequency plays a minor role in the quenching of I[sub PL]; and (iii) based on the partial ionic character of each semiconductor host, both the energy and the localization of the photon-generated electron-hole pairs determine the I[sub PL] quenching. Moreover, the present phenomenological model is consistent with the influence that codoping and thermal anneals have on the I[sub PL] enhancement of Er-doped compounds.


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