Illumination-induced recovery of Cu(In,Ga)Se[sub 2] solar cells after high-energy electron irradiation

Jasenek, A.; Rau, U.; Weinert, K.; Schock, H. W.; Werner, J. H.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1410
Academic Journal
Cu(In, Ga)Se[sub 2]/CdS/ZnO solar cells irradiated with a 1 MeV electron fluence of 10[sup 18] cm[sup -2] degrade to about 80% of their initial conversion efficiency. Illumination with white light at an intensity of 100 mW cm[sup -2] for 3 h at room temperature restores more than 90% of the preirradiation efficiency. The healing process is more efficient if the device is kept under open-circuit conditions during illumination than for short-circuit conditions. Injecting minority carriers by voltage bias in the dark, instead of illumination, does not cause enduring device recovery. This behavior of Cu(In, Ga)Se[sub 2] is in contrast to illumination-induced defect healing processes reported for other semiconductor materials, like GaAs, InP, or GaP.


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