Studies of field-induced nonequilibrium electron transport in an In[sub x]Ga[sub 1-x]N (x≅0.6) epilayer grown on GaN

Liang, W.; Tsen, K. T.; Ferry, D. K.; Kim, K. H.; Lin, J. Y.; Jiang, H. X.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1413
Academic Journal
Field-induced electron transport in an In[sub x]Ga[sub 1-x]N (x ≅ 0.6) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Nonequilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In[sub x]Ga[sub 1-x]N layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.


Related Articles

  • Self-pulsation in InGaN laser diodes with saturable absorber layers. Ohno, T.; Ito, S.; Kawakami, T.; Taneya, M. // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1098 

    Self-pulsating InGaN laser diodes with a p-type InGaN saturable absorber (SA) layer are demonstrated. The SA layer consists of a 1-nm-thick p-type InGaN well surrounded by 2-nm-thick p-type In[sub 0.02]Ga[sub 0.98]N barriers. The lower barrier of the SA is located on the 18-nm-thick p-type...

  • Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor... Lachab, M.; Nozaki, M. // Journal of Applied Physics;2/1/2000, Vol. 87 Issue 3, p1374 

    Focuses on a study on the selective fabrication of indium gallium nitride (InGaN) nanostructures on silicon coated GaN/sapphire substrates using the focused ion beam/metalorganic chemical vapor deposition process. Structural and optical properties of InGaN/GaN nanostructures; Experimental...

  • Electron transport mechanism in gallium nitride. Molnar, R.J.; Lei, T.; Moustakas, T.D. // Applied Physics Letters;1/4/1993, Vol. 62 Issue 1, p72 

    Examines electron transport mechanism in gallium nitride. Analysis of the temperature dependence of Hall coefficient and resistivity on samples; Determination of the activation energy; Decrease of the concentration of the autodoping centers.

  • Characterization of InGaN thin films using high-resolution x-ray diffraction. Go¨rgens, L.; Ambacher, O.; Stutzmann, M.; Miskys, C.; Scholz, F.; Off, J. // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p577 

    Wurtzite InGaN thin films grown by metalorganic chemical vapor deposition on sapphire substrates with and without GaN buffer layers are investigated by high-resolution x-ray diffraction measurements. The structural quality, lattice constants, strain, and indium composition of 100 nm thick films...

  • Luminescence energy and carrier lifetime in InGaN/GaN quantum wells as a function of applied biaxial strain. Shapiro, N. A.; Feick, H.; Hong, W.; Cich, M.; Armitage, R.; Weber, F. R. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4520 

    Continuous-wave and time-resolved photoluminescence of InGaN quantum wells are measured as a function of applied biaxial strain, which provides a unique means of altering the built-in polarization field in these structures. The direction and magnitude of the shift of the luminescence-peak energy...

  • Ultrafast intersubband relaxation (<=150 fs) in AlGaN/GaN multiple quantum wells. Iizuka, Norio; Kaneko, Kei; Suzuki, Nobuo; Asano, Takashi; Noda, Susumu; Wada, Osamu // Applied Physics Letters;7/31/2000, Vol. 77 Issue 5 

    The ultrafast intersubband relaxation in GaN quantum wells has been verified. Al[sub 0.65]Ga[sub 0.35]N/GaN multiple quantum wells, with as many as 200 wells, were grown by optimizing the barrier thickness and introducing GaN intermediate layers. The intersubband absorption is sufficiently...

  • Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures. Bai, J.; Wang, T.; Sakai, S. // Journal of Applied Physics;10/15/2000, Vol. 88 Issue 8, p4729 

    Examines the influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures. Enhancement of the exciton localization effect; Decrease of photoluminescence intensity with increasing quantum well thickness; Strength of the quantum confined Stark effect...

  • InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport. Pozina, G.; Bergman, J. P.; Bergman, J.P.; Monemar, B.; Iwaya, M.; Nitta, S.; Amano, H.; Akasaki, I. // Applied Physics Letters;9/11/2000, Vol. 77 Issue 11 

    We report on studies of In[sub 0.12]Ga[sub 0.88]N/GaN heterostructures with three 35-Ã…-thick quantum wells (QWs) grown on sapphire substrates by metalorganic vapor phase epitaxy with employment of mass transport. The structure is demonstrated to show good structural and optical properties....

  • Determination of InN–GaN heterostructure band offsets from internal photoemission measurements. Mahmood, Zahid Hasan; Shah, A. P.; Kadir, Abdul; Gokhale, M. R.; Ghosh, Sandip; Bhattacharya, Arnab; Arora, B. M. // Applied Physics Letters;10/8/2007, Vol. 91 Issue 15, p152108 

    Band discontinuities at the InN–GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent shows two threshold energies, one at 1.624 eV and the other at 2.527 eV. From these, we obtain the band...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics