Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

Özgür, Ümit; Everitt, Henry O.; Keller, Stacia; DenBaars, Steven P.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1416
Academic Journal
Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different QW In compositions x. SE threshold energy densities (I[sub th]) increased with increasing x-dependent QW depth. Time-resolved differential transmission measurements mapped the carrier relaxation mechanisms and explained the dependence of I[sub th] on x. Carriers are captured from the barriers to the QWs in < 1 ps, while carrier recombination rates increased with increasing x. For excitation above I[sub th], an additional, fast relaxation mechanism appears due to the loss of carriers in the barriers through a cascaded refilling of the QW state undergoing SE. The increased material inhomogeneity with increasing x provides additional relaxation channels outside the cascaded refilling process, removing carriers from the SE process and increasing I[sub th].


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