TITLE

Band offsets at CdCr[sub 2]Se[sub 4]–(AlGa)As and CdCr[sub 2]Se[sub 4]–ZnSe interfaces

AUTHOR(S)
Zhao, H. B.; Ren, Y. H.; Sun, B.; Lüpke, G.; Hanbicki, A. T.; Jonker, B. T.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1422
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The band discontinuities of CdCr[sub 2]Se[sub 4]-(AlGa)As and CdCr[sub 2]Se[sub 4]-ZnSe heterojunctions are measured to high resolution by internal photoemission using a widely tunable optical parametric amplifier system. The conduction band offsets ΔE[sub c] = 660 and 530 meV at the CdCr[sub 2]Se[sub 4]-GaAs and CdCr[sub 2]Se[sub 4]-ZnSe interfaces are determined from the threshold energies of the photocurrent spectrum at room temperature.
ACCESSION #
9176109

 

Related Articles

  • CdS induced homojunction formation in crystalline p-CuInSe2. Matson, R. J.; Noufi, R.; Bachmann, K. J.; Cahen, D. // Applied Physics Letters;1/19/1987, Vol. 50 Issue 3, p158 

    The deposition of CdS onto single-crystal p-CuInSe2 (at a substrate temperature of 200 °C) results in a CuInSe2 homojunction rather than the expected heterojunction. Junction depths, varying from 1 to 9 μm, correlated well with the free-carrier concentration of the sample crystals. The...

  • Analysis of contact degradation at the CdTe-electrode interface in thin film CdTe-CdS solar cells. Singh, V. P.; Erickson, O. M.; Chao, J. H. // Journal of Applied Physics;10/1/1995, Vol. 78 Issue 7, p4538 

    Presents a study which modeled the atmospheric degradation of unencapsulated cadmium sulfide-cadmium telluride solar cells based on the assumption that the initial cadmium telluride/electrode interface becomes a metal/insulator/semiconductor junction. Interpretation of the current-voltage...

  • Effects of reactive versus unreactive metals on the surface recombination velocity at CdS and CdSe(1120) interfaces. Rosenwaks, Y.; Burstein, L.; Shapira, Y.; Huppert, D. // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p458 

    Direct measurements of the surface recombination velocity (SRV) on etched CdS(1120), CdSe(1120) and at their interfaces with various metal ions and metals (deposited by electrolyte aqueous solutions and in situ thermal evaporation, respectively) have been performed using ultrafast time-resolved...

  • Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction. Liu, Y.; Rang, Z. L.; Fung, A. K.; Cai, C.; Ruden, P. P.; Nathan, M. I.; Shtrikman, H. // Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4586 

    Uniaxial compressive stress was applied to an AlGaAs/GaAs heterojunction. The uniaxial stress coefficients of sheet resistivity, sheet electron concentration, and mobility were obtained. The hydrostatic pressure coefficient of sheet resistivity was also obtained and was used to explain the...

  • In situ CdS nanocluster formation on scanning tunneling microscopy tips for reliable... Jiang, P.; Liu, Z.F.; Cai, S.M. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p3023 

    Demonstrates a chemical approach to fabricating double-barrier tunneling junction (DBTJ) by which CdS nanoclusters were directly synthesized on a scanning tunneling microscopy (STM) tip. DBTJ structure with highly oriented pyrolytic graphite substrate with STM-based current-voltage measurement...

  • Transit time studies of junction location in thin-film solar cells. Ahrenkiel, R. K.; Matson, R. J. // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p877 

    The active junction in Cd(Zn)S/CuInSe[sub 2] thin-film solar cells was investigated by a pulse photoconductivity technique. We observed the diffusion transit time of minority carriers to a homojunction internal to the CulnSe[sub 2]. No electrical activity at the heterojunction was indicated.

  • High resolution electron microscope study of epitaxial CdTe-GaAs interfaces. Otsuka, N.; Kolodziejski, L. A.; Gunshor, R. L.; Datta, S.; Bicknell, R. N.; Schetzina, J. F. // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p860 

    CdTe films have been grown on (100) GaAs substrates with two different epitaxial relations: (111)CdTe(100)GaAs and (100)CdTe(100)GaAs. High resolution electron microscope observation of these two types of interfaces was carried out in order to investigate the role of the substrate surface...

  • Photovoltaic X-ray detectors made of CdTe crystals with a p- n junction. Dvoryankin, V. F.; Dvoryankina, G. G.; Ivanov, Yu. M.; Kudryashov, A. A.; Petrov, A. G. // Technical Physics;Jul2010, Vol. 55 Issue 7, p1071 

    X-ray detectors made of CdTe crystals with a p- n junction obtained by diffusion of In into p-CdTe are investigated. The basic characteristics of such a detector are studied for the first time. It is found that the device is highly sensitive to X rays at a low bias voltage (to −50 V) and...

  • Capacitance spectroscopy investigation of the spin polarization of two-dimensional electronic systems. Dorozhkin, S. I.; Dorokhova, M. O.; Haug, R. J.; Ploog, K. // JETP Letters;1/10/97, Vol. 65 Issue 1, p108 

    It is shown that capacitance spectroscopy can be used to investigate the spin polarization of two-dimensional electronic systems (2DESs). We employed this method to investigate the spin polarization of 2DESs in a GaAs/AlGaAs heterojunction for filling factors of the magnetic-quantization levels...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics