Band offsets at CdCr[sub 2]Se[sub 4]–(AlGa)As and CdCr[sub 2]Se[sub 4]–ZnSe interfaces

Zhao, H. B.; Ren, Y. H.; Sun, B.; Lüpke, G.; Hanbicki, A. T.; Jonker, B. T.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1422
Academic Journal
The band discontinuities of CdCr[sub 2]Se[sub 4]-(AlGa)As and CdCr[sub 2]Se[sub 4]-ZnSe heterojunctions are measured to high resolution by internal photoemission using a widely tunable optical parametric amplifier system. The conduction band offsets ΔE[sub c] = 660 and 530 meV at the CdCr[sub 2]Se[sub 4]-GaAs and CdCr[sub 2]Se[sub 4]-ZnSe interfaces are determined from the threshold energies of the photocurrent spectrum at room temperature.


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