Electrical characteristics of proton-irradiated Sc[sub 2]O[sub 3] passivated AlGaN/GaN high electron mobility transistors

Luo, B.; Kim, Jihyun; Ren, F.; Gillespie, J. K.; Fitch, R. C.; Sewell, J.; Dettmer, R.; Via, G. D.; Crespo, A.; Jenkins, T. J.; Gila, B. P.; Onstine, A. H.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1428
Academic Journal
Sc[sub 2]O[sub 3]-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5 × 10[sup 9] cm[sup -2]). Devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices, consistent with differences in average band energy. The changes in device performance could be attributed completely to bulk trapping effects, demonstrating that the effectiveness of the Sc[sub 2]O[sub 3] layers in passivating surface states in the drain-source region was undiminished by the proton irradiation. Sc[sub 2]O[sub 3]-passivated AlGaN/HEMTs appear to be attractive candidates for space and terrestrial applications where resistance to high fluxes of ionizing radiation is a criteria.


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