TITLE

Fatigue-free La-modified PbTiO[sub 3] thin films prepared by pulsed-laser deposition on Pt/Ti/SiO[sub 2]/Si substrates

AUTHOR(S)
Dong, Zhenggao; Shen, Mingrong; Cao, Wenwu
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1449
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fatigue-free 14 mol% La-modified PbTiO[sub 3] (PLT) thin films were grown on Pt/Ti/SiO[sub 2]/Si substrates using pulsed-laser deposition and crystallized by furnace annealing at 600°C. The 220-nm-thick PLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2P[sub r]) and the coercive field (2E[sub c]) were about 20 µC/cm² and 70 kV/cm, respectively, and the PLT capacitors did not show any noticeable fatigue up to 3 × 10[sup 9] read/write switching cycles at a frequency of 1 MHz and switching voltage of 5 V. By comparing the microstructures, electric, and dielectric properties with those of pure PbTiO[sub 3] thin films, the suppression of oxygen vacancies and/or charged defects, and the coral-like microstructures developed in PLT films were attributed to its fatigue-free feature.
ACCESSION #
9176099

 

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