Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

Fan, W.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1452
Academic Journal
Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO[sub 2]/Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600°C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba[sub x]Sr[sub 1-x])TiO[sub 3] (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current < 2 × 10[sup -8] A/cm² at 100 kV/cm.


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