Nanometer-scale composition measurements of Ge/Si(100) islands

Floyd, Margaret; Zhang, Yangting; Driver, K. P.; Drucker, Jeff; Crozier, P. A.; Smith, David J.
March 2003
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1473
Academic Journal
Quantitative, nanometer-scale spatial resolution electron energy-loss spectroscopy (EELS) was used to map the composition of coherent islands grown by molecular-beam epitaxy of pure Ge onto Si(100). The Ge concentration X[sub Ge] decreased, and the Ge/Si interface became more diffuse as the growth temperature increased from 400 to 700°C. Integrated island volumes measured by atomic force microscopy (AFM) increased linearly with Ge coverage θ[sub Ge], with slopes greater than 1. This result confirmed that island growth is faster than the Ge deposition rate due to Si interdiffusion. The linearity of the island volume versus θ[sub Ge] curves implied that X[sub Ge] was independent of island size. X[sub Ge] measured by EELS and AFM agree well with each other and correctly predicted the minimum dome size observed at each growth temperature.


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