TITLE

Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81, 2755 (2002)]

AUTHOR(S)
Kuokstis, E.; Zhang, J.; Fareed, Q.; Yang, J. W.; Simin, G.; Khan, M. Asif; Gaska, R.; Shur, M.; Rojo, J. C.; Schowalter, L. J.
PUB. DATE
March 2003
SOURCE
Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1488
SOURCE TYPE
Academic Journal
DOC. TYPE
Correction Notice
ABSTRACT
Presents a correct reprint to the article 'Near-band-edge photoluminescence of wurtzite-type AlN,' published in the 2002 issue of the 'Applied Physics Letters' journal.
ACCESSION #
9176085

 

Related Articles

  • Photoluminescence studies of Si-doped AlN epilayers. Nam, K.B.; Nakarmi, M.L.; Li, J.; Lin, J.Y.; Jiang, H.X. // Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2787 

    Si-doped AlN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates. Deep ultraviolet picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the optical transitions in the grown epilayers. The donor bound exciton (or I[sub 2])...

  • Optical and reduced band gap in n- and p-type GaN and AlN. Persson, C.; Sernelius, Bo E.; Ferreira da Silva, A.; Arau´jo, C. Moyse´s; Ahuja, R.; Johansson, B. // Journal of Applied Physics;9/15/2002, Vol. 92 Issue 6, p3207 

    We present a full band calculation of the doping-induced energy shifts of the conduction-band minimum and the valence-band maximum for n- and p-type GaN and AlN. Both wurtzite and zinc-blende structures have been considered. The resulting optical and reduced band-gap energies are presented as...

  • Photoluminescence studies on InGaN/GaN multiple quantum wells with different degree of localization. Hao, M.; Zhang, J.; Zhang, X. H.; Chua, S. // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5129 

    It has been found, by using photoluminescence (PL) studies, that both the localized states and nonradiative recombination centers in In[sub 0.06]Ga[sub 0.94]N/GaN multiple quantum wells (MQWs) can be greatly suppressed by inserting a monolayer of AlN before the growth of each well layer. While...

  • Direct and indirect excitation of Er[sup 3+] ions in Er: AIN. Wu, X.; Hommerich, U. // Applied Physics Letters;4/21/1997, Vol. 70 Issue 16, p2126 

    Examines photoluminescence excitation and time-resolved photoluminescence measurements on erbium doped aluminum nitride. Growth of erbium:aluminum nitride film by metal organic molecular beam epitaxy; Result of erbium concentration; Observation of decay patterns; Life span of erbium[sup 3+]...

  • Beryllium acceptor binding energy in AlN. Sedhain, A.; Al Tahtamouni, T. M.; Li, J.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;10/6/2008, Vol. 93 Issue 14, p141104 

    The acceptor binding energy of an alternative dopant, Be, in AlN epilayers has been probed by time-resolved photoluminescence (PL) spectroscopy. The binding energy of excitons bound to Be acceptors in AlN is determined to be about 33 meV, which implies that the Be acceptor binding energy in AlN...

  • Photoluminescence Studies of Aluminum Nitride Nanowires. YANG, J. C.; NA, H. G.; KIM, H. S.; KEBEDE, M. A.; CHOI, R.; JEONG, J. K.; LEE, C.; KIM, H. W. // Acta Physica Polonica, A.;Feb2011, Vol. 119 Issue 2, p125 

    We report the production of AlN nanowires by the thermal heating method, for exploring their photoluminescence properties. The room-temperature photoluminescence properties were investigated with different annealing environment. While broad emissions with peaks at around 2.45 and 2.95 eV were...

  • Optical properties of the nitrogen vacancy in AlN epilayers. Nepal, N.; Nam, K.B.; Nakarmi, M.L.; Lin, J.Y.; Jiang, H.X.; Zavada, J.M.; Wilson, R.G. // Applied Physics Letters;2/16/2004, Vol. 84 Issue 7, p1090 

    AlN epilayers grown by metalorganic chemical vapor deposition were implanted with cobalt ions and studied by deep UV photoluminescence (PL). A PL emission peak at 5.87 eV (at 10 K) was observed for the Co-implanted AlN epilayers, which was absent in as-grown AlN epilayers. Temperature dependence...

  • Low-temperature metalorganic chemical vapor deposition of luminescent manganese-doped aluminum nitride films. Sato, A.; Azumada, K.; Atsumori, T.; Hara, K. // Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p021907 

    Mn-doped AlN films have been prepared at a substrate temperature of 400 °C by metalorganic chemical vapor deposition using bismethylcyclopentadienyl manganese as a Mn source. The Mn concentration in the films (CMn) was controlled extensively in the region from 2×1018 to 1×1021 cm-3....

  • Emission properties of an amorphous AlN:Cr[sup 3+] thin-film phosphor. Caldwell, M. L.; Martin, A. L.; Dimitrova, V. I.; Van Patten, P. G.; Kordesch, M. E.; Richardson, H. H. // Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1246 

    Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 10[sup -4] Torr. Film thickness was typically 200 nm. After growth, the films were "activated" at ∼1300 K for 30 min in a nitrogen...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics