High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm

Choulis, S. A.; Andreev, A.; Merrick, M.; Adams, A. R.; Murdin, B. N.; Krier, A.; Sherstnev, V. V.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1149
Academic Journal
The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs.


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