Quasi-phase-matched difference frequency generation (8–13 μm) in an isotropic semiconductor using total reflection

Haıdar, R.; Kupecek, Ph.; Rosencher, E.; Triboulet, R.; Lemasson, Ph.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1167
Academic Journal
We report on the quasi-phase-matched difference frequency generation in an isotropic semiconductor (zinc selenide) using total internal reflection. We made use of large Fresnel birefringence at reflection between the signal and idler outputs of an optical parametric oscillator. Large tunability (between 8 and 13 μm) is demonstrated. Agreement between theoretical expectation and experimental results is excellent.


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