Raman-spectroscopic determination of inhomogeneous stress in submicron silicon devices

Dietrich, B.; Bukalo, V.; Fischer, A.; Dombrowski, K. F.; Bugiel, E.; Kuck, B.; Richter, H. H.
February 2003
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1176
Academic Journal
We present the deconvolution of measurements of inhomogeneous mechanical stress in silicon device structures obtained by UV micro-Raman spectroscopy. Due to the very small UV penetration depth of only 12 nm, averaging of stress over the depth is almost eliminated. Only the averaging of stress over the area of the laser spot remains. By deconvolution of the spectra and comparison with finite element simulations, it is now possible to extract information on mechanical stress from areas as small as 200 nm. Oppositely stressed regions in submicroscopic dimensions can be detected, which could not be detected in previous visible light measurements due to averaging.


Related Articles

  • Stress measurements using ultraviolet micro-Raman spectroscopy. Dombrowski, K.F.; Dietrich, B. // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2450 

    Studies the stress measurements using ultraviolet micro-Raman spectroscopy. Raman spectrum of the first-order silicon phonon; Comparison of stress patterns measured; Detection of localized stresses averaged out by longer wavelength light.

  • Raman scattering studies of ultrashallow Sb implants in strained Si. O'Reilly, L.; Bennett, N. S.; McNally, P. J.; Sealy, B. J.; Cowern, N. E. B.; Lankinen, A.; Tuomi, T. O. // Journal of Materials Science: Materials in Electronics;Apr2008, Vol. 19 Issue 4, p305 

    Sheet resistance ( R s) reductions are presented for antimony doped layers in strained Si. We use micro-Raman spectroscopy to characterise the impact of a low energy (2 keV) Sb implantation into a thin strained Si layer on the crystalline quality and resultant stress in the strained Si. The use...

  • Strain redistribution in free-standing bridge structure released from strained silicon-on-insulator. Gaodi Sun; Miao Zhang; Zhongying Xue; Qinglei Guo; Da Chen; Zhiqiang Mu; Linxi Dong; Xi Wang; Zengfeng Di // Applied Physics Letters;11/10/2014, Vol. 105 Issue 19, p1 

    The strain evolution including relaxation and conversion during the fabrication of free-standing bridge structure, which is the building block for the gate-all-around transistor, has been investigated in strained silicon-on-insulator. Compared to the starting strained silicon-on-insulator...

  • Anisotropy in structural and physical properties in tetrathiafulvalene derivatives-based zone-cast layers as seen by Raman spectroscopy, UV-visible spectroscopy, and field effect measurements. Kotarba, Sylwia; Jung, Jaroslaw; Kowalska, Aneta; Marszalek, Tomasz; Kozanecki, Marcin; Miskiewicz, Pawel; Mas-Torrent, Marta; Rovira, Concepció; Veciana, Jaume; Puigmarti-Luis, Josep; Ulanski, Jacek // Journal of Applied Physics;Jul2010, Vol. 108 Issue 1, p014504 

    We have studied anisotropy of thin layers of amphiphilic tetrathiafulvalene derivatives (TTF-4SCn, with n=12, 18, and 22) obtained by zone-casting technique. All the films show optical anisotropy, as seen by polarized optical microscopy and polarized UV-visible spectroscopy. By using polarized...

  • Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering. Iyer, S. S.; Tsang, J. C.; Copel, M. W.; Pukite, P. R.; Tromp, R. M. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p219 

    The influence of growth temperature on the interfacial abruptness of strained Ge layers, a few monolayers thick, embedded in Si has been studied using Raman spectroscopy to identify the presence of GeGe and GeSi bonds and medium energy ion scattering to characterize the spatial extent of the...

  • Raman spectroscopic study of surface layer in fluorine-implanted Si. Park, Yong-Jik; Mo, Yujun; Kim, Jong-Jean // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5509 

    Presents a Raman spectroscopic study of surface layer in fluorine-implanted silicon. Experimental procedures; Results; Summary and conclusion.

  • Raman determination of structures of long-period SiC polytypes. Nakashima, S.; Kisoda, K.; Gauthier, J.-P. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p5354 

    Presents a study which examined the application of Raman spectroscopy to the identification of longer-period silicon carbide polytypes. Background on the sample materials; Principle behind Raman spectroscopy; Methodology; Results.

  • Raman study of silicon nanocrystals formed in SiN[sub x] films by excimer laser or thermal annealing. Volodin, V. A.; Efremov, M. D.; Gritsenko, V. A.; Kochubei, S. A. // Applied Physics Letters;8/31/1998, Vol. 73 Issue 9 

    Silicon nitride films of different stoichiometric composition were studied using Raman spectroscopy. A Raman signal due to Si–Si, Si–N bond vibrations in silicon nanoclusters was detected in as-deposited films. The appearance of Raman peaks in the range 493–514 cm[sup -1]...

  • Raman scattering of Si localized vibrational modes in InAs. Uematsu, Masashi // Journal of Applied Physics;2/1/1991, Vol. 69 Issue 3, p1781 

    Studies the localized vibrational modes of silicon in InAs. Details on the experiment; Information on the Raman spectra of the silicon-implanted InAs; Origin of the enhancement in Si[sub1n].


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics