TITLE

Origin of the efficient light emission from inversion domain boundaries in GaN

AUTHOR(S)
Fiorentini, Vincenzo
PUB. DATE
February 2003
SOURCE
Applied Physics Letters;2/24/2003, Vol. 82 Issue 8, p1182
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Intentionally produced inversion domain boundaries in GaN have been reported to be highly efficient shallow recombination centers. This letter report a rationale for this phenomenon based on ab initio density-functional calculations. A model is also proposed, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces.
ACCESSION #
9140766

 

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